Silicon masking layer system, for producing porous silicon structures useful in optics, chemical sensors and surface micromechanical structures, comprises a silicon dioxide layer, a bond layer and a protective layer

摘要

A silicon masking layer system (20), comprising a silicon dioxide layer (11), a bond layer (12) and a protective layer (13), is new. An Independent claim is also included for production of the above layer system by thermal oxidation of the silicon layer (10) to form the silicon dioxide layer (11) and then depositing the other layers (12, 13) by vapor, sputter or chemical deposition. Preferred Features: The bond layer (12) consists of one or more of tantalum, chromium, gold, titanium, manganese, vanadium, cobalt, nickel, silicon, copper, zinc and molybdenum or their oxides, nitrides or carbides and the protective layer (13) consists of a precious metal, silicon or their oxides, nitrides or carbides.