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首页> 外文期刊>Journal of microanolithography, MEMS, and MOEMS >Attenuated phase shift mask for extreme ultraviolet: can they mitigate three-dimensional mask effects?
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Attenuated phase shift mask for extreme ultraviolet: can they mitigate three-dimensional mask effects?

机译:用于极端紫外线的衰减相移掩模:它们可以减轻三维掩模的影响吗?

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摘要

The understanding, characterization, and mitigation of three-dimensional (3-D) mask effects including telecentricity errors, contrast fading, and best focus shifts become increasingly important for the performance optimization of future extreme ultraviolet (EUV) projection systems and mask designs. We explore the potential of attenuated phase shift mask (attPSM) to mitigate 3-D mask effects and exploit them for future EUV imaging. The scattering of light at the absorber edges results in significant phase deformations, which impact the effective phase and the lithographic performance of attPSM for EUV. Rigorous mask and imaging simulations in combination with multiobjective optimization techniques are employed to identify the most appropriate material properties, mask, and source geometries. The resulting imaging performance is compared to the achievable performance of binary EUV masks.
机译:对于未来远紫外线(EUV)投影系统和掩模设计的性能优化而言,对包括远心误差,对比度褪色和最佳焦点偏移在内的三维(3-D)掩模效果的理解,表征和缓解变得越来越重要。我们探索了衰减相移掩模(attPSM)减轻3D掩模效应的潜力,并将其用于未来的EUV成像。光在吸收体边缘的散射会导致明显的相位变形,这会影响有效相位和atPSPSM的EUV光刻性能。严格的掩模和成像模拟与多目标优化技术相结合,可用于确定最合适的材料属性,掩模和源几何形状。将得到的成像性能与二进制EUV掩模可实现的性能进行比较。

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