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Microstructure stability of fine-grained silicon carbide ceramics during annealing

机译:细晶碳化硅陶瓷退火过程中的组织稳定性

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摘要

Fine-grained silicon carbide ceramics with an average grain size of ∼140 nm or smaller were prepared by low-temperature hot-pressing of very fine β-SiC powders using Al2O3-Y2O3-CaO (AYC) or Y-Mg-Si-Al-O-N glass (ON) as sintering additives. The microstructure stability of the resulting fine-grained SiC ceramics was investigated by annealing at 1850°C and by evaluating quantitatively the grain growth behavior using image analysis. The β → α phase transformation of SiC in AYC-SiC was responsible for the accelerated abnormal grain growth of platelet-shaped grains. In contrast, the β → α phase transformation in ON-SiC was suppressed, which resulted in a very stable microstructure.
机译:通过使用Al2 O3 -Y2 对非常细的β-SiC粉末进行低温热压,制备出平均晶粒尺寸约为140nm或更小的细晶碳化硅陶瓷。 O3 -CaO(AYC)或Y-Mg-Si-Al-ON玻璃(ON)作为烧结添加剂。通过在1850°C退火并通过图像分析定量评估晶粒生长行为,研究了所得细晶粒SiC陶瓷的微观结构稳定性。 AYC-SiC中SiC的β→α相变是导致片状晶粒加速异常生长的原因。相比之下,ON-SiC中的β→α相变得到了抑制,这导致了非常稳定的微观结构。

著录项

  • 来源
    《Journal of Materials Science》 |2004年第11期|3613-3617|共5页
  • 作者单位

    Department of Materials Science and Engineering The University of Seoul;

    Department of Materials Science and Engineering The University of Seoul;

    National Institute for Materials Science;

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  • 原文格式 PDF
  • 正文语种 eng
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