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Novel thermal interface materials: boron nitride nanofiber and indium composites for electronics heat dissipation applications

机译:新型热界面材料:用于电子散热应用的氮化硼纳米纤维和铟复合材料

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摘要

With increased power density and continued miniaturization, effective thermal dissipation is of significant importance for operational lifetime and reliability of electronic system. Advanced thermal interface materials (TIMs) with excellent thermal performance need to be designed and developed. Here we report novel TIMs consisted of boron nitride (BN) nanofibers and pure indium (In) solder for heat dissipation applications. The BN nanofibers are fabricated by electrospinning process and nitridation treatment. After surface metallization by sputtering, the porous BN film is infiltrated with liquid indium by squeeze casting to form the final solid composites. The new composites show the in-plane and through-plane thermal conductivity respectively of 60 and 20 W/m K. The direction dependence thermal properties of the TIM are due to the anisotropic thermal performance of BN nanofibers in the composite. A low thermal contact resistance of 0.2 K mm2/W is also achieved at the interface between this new composite and copper substrate. These competent thermal properties demonstrate the great potential of the BN-In TIMs in thermal management for electronic system.
机译:随着功率密度的提高和持续小型化,有效的散热对于电子系统的使用寿命和可靠性至关重要。需要设计和开发具有出色热性能的高级热界面材料(TIM)。在这里,我们报告了新型TIM,它们由氮化硼(BN)纳米纤维和纯铟(In)焊料组成,用于散热应用。 BN纳米纤维是通过静电纺丝和氮化处理制成的。在通过溅射进行表面金属化之后,通过挤压铸造使多孔的BN膜浸入液态铟中以形成最终的固体复合物。新型复合材料的面内和平面内导热率分别为60 W / m K和20 W / mK。TIM的方向相关的热性能归因于复合材料中BN纳米纤维的各向异性热性能。在这种新型复合材料和铜基板之间的界面处,还实现了0.2 K mm2 / W的低热接触电阻。这些出色的热性能证明了BN-In TIM在电子系统热管理中的巨大潜力。

著录项

  • 来源
    《Journal of materials science》 |2014年第5期|2333-2338|共6页
  • 作者单位

    Key Laboratory of New Displays and System Applications and SMIT Center, School of Mechanical Engineering and Automation, Shanghai University, Shanghai 200072, China,Department of Microtechnology and Nanoscience (MC2), SMIT Center, Chalmers University of Technology, Kemivaegen 9, MC2 Building Room A517, 412 96 Goteborg, Sweden;

    Key Laboratory of New Displays and System Applications and SMIT Center, School of Mechanical Engineering and Automation, Shanghai University, Shanghai 200072, China,Department of Microtechnology and Nanoscience (MC2), SMIT Center, Chalmers University of Technology, Kemivaegen 9, MC2 Building Room A517, 412 96 Goteborg, Sweden;

    Department of Microtechnology and Nanoscience (MC2), SMIT Center, Chalmers University of Technology, Kemivaegen 9, MC2 Building Room A517, 412 96 Goteborg, Sweden;

    Department of Microtechnology and Nanoscience (MC2), SMIT Center, Chalmers University of Technology, Kemivaegen 9, MC2 Building Room A517, 412 96 Goteborg, Sweden;

    Department of Materials and Manufacturing Technology, Chalmers University of Technology, 412 96 Goeteborg, Sweden;

    SHT Smart High-Tech AB, Fysikgrand 3, 412 96 Goeteborg, Sweden;

    Key Laboratory of New Displays and System Applications and SMIT Center, School of Mechanical Engineering and Automation, Shanghai University, Shanghai 200072, China,Department of Microtechnology and Nanoscience (MC2), SMIT Center, Chalmers University of Technology, Kemivaegen 9, MC2 Building Room A517, 412 96 Goteborg, Sweden;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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