首页> 外国专利> HEXAGONAL BORON NITRIDE SINGLE CRYSTAL, METHOD FOR MANUFACTURING THE SAME, COMPOSITE MATERIAL COMPOSITION MIXED WITH HEXAGONAL BORON NITRIDE SINGLE CRYSTAL AND HEAT DISSIPATION MEMBER OBTAINED BY MOLDING COMPOSITE MATERIAL COMPOSITION

HEXAGONAL BORON NITRIDE SINGLE CRYSTAL, METHOD FOR MANUFACTURING THE SAME, COMPOSITE MATERIAL COMPOSITION MIXED WITH HEXAGONAL BORON NITRIDE SINGLE CRYSTAL AND HEAT DISSIPATION MEMBER OBTAINED BY MOLDING COMPOSITE MATERIAL COMPOSITION

机译:六方氮化硼单晶,制造方法,混合六方氮化硼单晶和复合材料组成的散热材料

摘要

PROBLEM TO BE SOLVED: To provide a hexagonal boron nitride single crystal having 0.3 or more of an aspect ratio defined by the maximum thickness in the crystal c axis direction/the maximum width on a crystal ab plane, and a method for manufacturing the same.SOLUTION: The method for manufacturing a h-BN single crystal by a flux method comprises: mixing a BN powder using as a raw material and having 0.4° or more of a peak half value width on a 002 plane in XRD analysis with lithium salt using as flux; and heating the mixture at a predetermined temperature for a predetermined period to grow the mixture into a crystal. The h-BN single crystal is manufactured by the method promoting the c axis direction growth of the h-BN crystal more than the ab plane growth and has 0.3 or more of an aspect ratio defined by the maximum thickness in the crystal c axis direction/the maximum width on the crystal ab plane.SELECTED DRAWING: Figure 4
机译:解决的问题:提供纵横比为0.3以上的六方氮化硼单晶及其制造方法,该六方氮化硼单晶由晶体c轴方向上的最大厚度/晶体ab平面上的最大宽度限定。解决方案:通过熔剂法制造h-BN单晶的方法包括:将BN粉末用作原材料,并在XRD分析中在002平面上将半峰宽的0.4°或更大的半峰宽与锂盐混合使用。作为通量将混合物在预定温度下加热预定时间以使混合物生长成晶体。 h-BN单晶是通过促进h-BN晶体的c轴方向的生长大于ab面的生长的方法制造的,并且具有由晶体c轴方向的最大厚度/晶体ab平面上的最大宽度。选定的图:图4

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号