Implementation of a 2.45GHz Passive RFID Transponder Chip in 0.18μm CMOS

摘要

In this paper, a passive 2.45GHz band RFID transponder chip for high data rate communication and with low power consumption has been presented. The passive transponder chip contains five parts: a voltage multiplier converts received RF signal to the DC power supply, a mode selector decides the operating status, a low power dissipation LC-tank voltage control oscillator, a 32-bit read only memory, and a modulator. The RF-to-DC circuit can generate the required power supply and bias voltages from received 2.45GHz RF signal with 250mV amplitude. The data stored in 32-bit ROM can modulate the 2.45GHZ carrier generated by VCO at up to 153Mbps for backscattering the data. The chip was designed and implemented by using TSMC 0.18μm 1P6M CMOS process. The chip area is 905μm × 652μm with simulated power consumption less than 4mW. The measurement and simulation results are well matched.