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Room-Temperature Preparation of High-Transparency Low-Resistivity ITO Films by Ion Beam Sputtering

机译:离子束溅射在室温下制备高透明度低电阻率ITO薄膜

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摘要

Low-temperature preparation of transparent conducting electrodes is essential for flexible optoelectronic devices. Tin-doped In2O3 films with high transparency and low electrical resistance were prepared at room temperature using a radiofrequency ion beam sputtering system. Specimens with a low sheet resistivity of 10−4 Ω cm and a high visible-light transmittance of 85% to 90% were obtained. Hall measurements were used to determine mobility and carrier concentration, and the effects on resistivity are discussed.
机译:透明导电电极的低温制备对于柔性光电器件至关重要。使用射频离子束溅射系统,在室温下制备了具有高透明性和低电阻的掺锡In 2 O 3 薄膜。获得了低薄层电阻率为10 -4 Ωcm和高可见光透射率为85%至90%的样品。霍尔测量用于确定迁移率和载流子浓度,并讨论了对电阻率的影响。

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