LOW-RESISTIVITY MICRO-BORON DOPED ROTARY SPUTTERING SILICON TARGET MATERIAL AND PREPARATION METHOD THEREFOR

摘要

Provided are a low-resistivity micro-boron doped rotary sputtering silicon target material and a preparation method therefor. The target material is prepared from 0.03wt% to 0.5wt% of boron and 99.4wt% to 99.9wt% of silicon and impurities. The preparation method comprises: preparing a stainless steel back tube, preparing powder containing boron and silicon, performing vacuum plasma spraying of the powder containing boron and silicon onto the surface of the stainless steel back tube, and machining the target material.