InAs/InGaAsN quantum dots emitting at 1.55μm grown by molecular beam epitaxy

摘要

InAs/InGaAsN quantum dots have been grown by molecular beam epitaxy on GaAs substrates. Transmission electron microscopy shows the increase in the island size as compared to the InAs/InGaAs quantum dots. Room temperature photoluminescence at 1.55μm has been demonstrated whose intensity was comparable to that of the InGaAsN/GaAs quantum wells emitting at 1.3μm. The effect of nitrogen concentration on the PL peak position and intensity has been studied.