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Silicon nanowires grown from silicon monoxide under hydrothermal conditions

机译:在水热条件下由一氧化硅生长的硅纳米线

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摘要

Hydrothermal method with silicon monoxide as starting material was used to synthesize silicon nanowires (SiNWs). Transmission electron spectroscopy demonstrates that SiNWs have smooth surface and about 35 nm in diameter, micrometers in length. High-resolution transmission electron spectroscopy shows that each nanowire consists a polycrystalline Si core and an amorphous silica sheath. Si and silicon oxide are proposed to generate from SiO under the high temperature and high pressure of hydrothermal conditions. The growth mechanism of SiNWs is proposed as the oxide-assisted growth mechanism.
机译:以一氧化硅为原料的水热法合成了硅纳米线(SiNWs)。透射电子光谱证明SiNW具有光滑的表面并且直径为约35nm,长度为微米。高分辨率透射电子光谱表明,每条纳米线均包含一个多晶硅芯和一个非晶硅皮。提出了在水热条件下的高温高压下由SiO生成Si和氧化硅。提出了SiNWs的生长机理作为氧化物辅助生长机理。

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