Formation of a hybrid pn junction via p-type aluminium induced crystallized polycrystalline silicon on hydrothermally grown n-type zinc oxide nanowires

摘要

p-Type silicon coated zinc oxide (ZnO) nanowire heterojunction was fabricated using a combination of aluminium induced crystallization (AIC) and hydrothermal growth. The p-type AIC Si-type ZnO nanowires stacked layers were extensively characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDX), UV-vis spectroscopy, XRD, photoluminescence emission spectroscopy and electrical measurements. Photovoltaic measurements indicate that the device is light-sensitive and maybe of potential in sensor applications. (C) 2015 Elsevier Ltd. All rights reserved.