机译:衬底温度对金辅助MOVPE生长的GaAs纳米线形状的影响
Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia Department of Micro and Nanosciences, Helsinki University of Technology, FI-02150 Espoo, Finland;
St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia;
Department of Micro and Nanosciences, Helsinki University of Technology, FI-02150 Espoo, Finland;
Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia Institute for Analytical Instrumentation, 190103 St. Petersburg, Russia;
Department of Micro and Nanosciences, Helsinki University of Technology, FI-02150 Espoo, Finland;
Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia;
A1. MOVPE; A1. Vapor-liquid-solid mechanism; B2. GaAs nanowires;
机译:MOVPE生长的金辅助InAs纳米线的优化
机译:衬底温度对MOVPE在(100)GaAs衬底上生长的ZnTe外延层光学性能的影响
机译:在预先构图的Si(1 1 1)衬底上生长的Au催化的MBE生长的GaAs-AlGaAs核壳纳米线的低温光致发光和拉曼声子模式
机译:用拉曼光谱法测量脉冲辅助气体外延生长的金辅助生长的GaAs纳米线的结构表征
机译:通过分子束外延生长的GaAs / Gaassb(N)核心壳纳米线的带隙调谐
机译:通过Au辅助分子束外延生长后的GaAs(111)纳米线和Si(111)衬底之间的晶格参数调节
机译:具有轴向GaAs插入物的Au辅助MBE生长的AlGaAs纳米线的微光致发光光谱。
机译:分子外延生长在Gaas和硅衬底上的低温Gaas的光电性能。