Epitaxial growth of orthorhombic SnO_2 films on various YSZ substrates by plasma enhanced atomic layer deposition

摘要

SnO_2 thin films were deposited on (100), (110), and (111) yttria-stabilized zirconia (YSZ) substrates using plasma enhanced atomic layer deposition (PEALD), and their structural, electrical, and optical properties were investigated. X-ray diffraction, X-ray pole figure, and high resolution TEM analyses revealed that orthorhombic (100) and (110) SnO_2 films were hetero-epitaxially grown on (100) and (110) YSZ, respectively. The determined in-plane orientation relationships were [010]_(C-SnO_2) ||[010]_(YSZ) and [001]_(C-SnO_2)||[001]_(YSZ) ((100)YSZ) and [110]_(C-SnO_2)||[110]_(YSZ) and [001]_(C-SnO_2)||[001]_(YSZ) ((110)YSZ). However, polycrystalline rutile SnO_2 films were deposited on the (111) YSZ substrate. All the SnO_2 films exhibited a similar electrical resistivity of ～2 × 10~(-2) Ω cm and the average transmittance of 78% in the visible range and thus the electrical and optical properties were not noticeably changed with film orientation and phase.