Microstructure of PAMBE-grown InN layers on Si(111)

摘要

The microstructure of InN layers grown by plasma-assisted molecular beam epitaxy on Si(111) substrates and an A1N buffer layer was investigated. InN layers with a thickness of ～500nm were deposited at substrate temperatures between 325℃ and 375℃ under otherwise identical conditions. The structural characterization was performed by scanning electron microscopy and different transmission electron microscopy techniques including selective-area electron diffraction, electron-energy loss spectroscopy and energy-dispersive X-ray spectroscopy. The microstructure of the InN layers changes considerably despite the comparably small interval of growth temperatures.