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机译:半绝缘InP:Fe用于气体源分子束外延生长的掩埋异质结构应变补偿量子级联激光器
Department of Physics, Humboldt University Berlin, Newtonstrasse 15, D-12489 Berlin, Germany;
Department of Physics, Humboldt University Berlin, Newtonstrasse 15, D-12489 Berlin, Germany;
Department of Physics, Humboldt University Berlin, Newtonstrasse 15, D-12489 Berlin, Germany;
Department of Physics, Humboldt University Berlin, Newtonstrasse 15, D-12489 Berlin, Germany;
Department of Physics, Humboldt University Berlin, Newtonstrasse 15, D-12489 Berlin, Germany;
Department of Physics, Humboldt University Berlin, Newtonstrasse 15, D-12489 Berlin, Germany;
Department of Physics, Humboldt University Berlin, Newtonstrasse 15, D-12489 Berlin, Germany;
A3. Molecular-beam epitaxy; B2. Semiconducting Ⅲ-Ⅴ materials; B3. Heterojunction semiconductor devices; B3. Infrared devices;
机译:气源分子束外延生长掩埋异质结构量子级联激光的长大生长
机译:气源分子束外延生长的掩埋异质结构量子级联激光器
机译:气源分子束外延生长的掩埋异质结构量子级联激光器
机译:源间断气体源分子束外延生长InGaAs / InP量子阱的光致发光研究
机译:气源分子束外延生长的量子级联激光器。
机译:应变补偿的InGaAsP超晶格用于通过金属有机化学气相沉积减少在精确取向的(001)图案化Si衬底上生长的InP的缺陷
机译:通过激光辅助分子束外延使用高温退火自缓冲层生长的Mg0.11zn0.89O合金膜中的激子的重组动力学
机译:通过分子束外延生长的双异质结构pbsnTe激光器,CW工作频率高达114 K.