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机译:在MOCVD-GaN /蓝宝石模板和氨热GaN种子上生长的HVPE-GaN:结构,光学和电学性质的比较
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland,TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, USA;
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland,TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, USA;
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland;
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, USA;
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland,TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, USA;
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland;
Ammono S.A., Prusa 2, 00-493 Warsaw, Poland;
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland;
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland,TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland;
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, USA;
A1. Characterization; A3. Hydride vapor phase epitaxy; B1. GaN; B1. Nitrides; B2. Semiconducting Ⅲ-Ⅴ materials;
机译:大气压MOCVD法在(0001)蓝宝石和GaN /(0001)蓝宝石模板上生长的ZnO薄膜的结构和光学性质的比较
机译:AlN中间层对在GaN /蓝宝石模板上生长的p型AlGaN / GaN超晶格的微观结构和电学性质的影响
机译:HVPE-GaN:比较在不同横向过长模板上生长的薄膜的发射特性和微观结构
机译:氮离子损伤对MBE GaN在Mocvd GaN / Sapphire模板上生长的光学和电气性质的影响
机译:InGaN / GaN多量子阱结构:亚微米结构,光学,电和化学性质。
机译:使用双AlN缓冲层在m面蓝宝石上生长的半极性(11-22)GaN的各向异性结构和光学性质
机译:蓝宝石和硅基板上生长的蓝色发光结构和光学性质的比较