机译:具有可调功函数的双层金属栅电极:机理和提出的模型
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA;
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA;
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA;
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA;
rnDepartment of Electrical Engineering, Stanford University, Stanford, California 94305, USA;
rnDepartment of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA;
rnDepartment of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA;
机译:SiO {sub} 2和HfO {sub} 2上双层金属结构的可调功函数栅电极的特性和机理
机译:具有可调功函数的双层金属栅电极:粘附力和界面特性
机译:具有可调功函数的双层金属栅电极:粘附力和界面特性
机译:可调谐工作功能适用于完全硅基(Fusi)和提出的机制
机译:具有可调功函数的双层金属栅电极:行为,机理和器件特性。
机译:高阶认知机制的层次和功能连通性:神经机器人模型用于研究工作记忆的稳定性和灵活性
机译:20nm以下氮化钛(TiN)金属栅极的功函数调整:机理与工程