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Impulse Aging Behavior Against of Zn-Pr-Co-Cr-Dy Varistors with Cobalt Addition

机译:钴添加对Zn-Pr-Co-Cr-Dy压敏电阻的冲击老化行为

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摘要

The CoO-doping effect on impulse aging behavior of the Zn-Pr-Co-Cr-Dy varistors was investigated in the range of 0.5-2.0 mol%. The clamp voltage ratio (K) increased with increasing CoO content. The varistors doped with 0.5 mol% CoO exhibited the best clamping characteristics, which the K value is 2.05-2.53 at an impulse current of 400-1200 A. The best stability was obtained from the varistor doped with 1.0 mol% CoO, with %△E_(1 mA/cm~2) = -0.7%, %△α = -4.4%, and %△J_L = -2.3% after applying the impulse stress of 1200 A.
机译:研究了CoO掺杂对Zn-Pr-Co-Cr-Dy压敏电阻的脉冲老化行为的影响,范围为0.5-2.0 mol%。钳位电压比(K)随着CoO含量的增加而增加。掺杂0.5 mol%CoO的压敏电阻表现出最佳的钳位特性,在400-1200 A的冲击电流下K值为2.05-2.53。最佳的稳定性是通过掺杂1.0 mol%CoO的压敏电阻(%△)获得的。施加1200 A的脉冲应力后,E_(1 mA / cm〜2)= -0.7%,%△α= -4.4%,%△J_L = -2.3%。

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  • 作者

    Choon-W. Nahm;

  • 作者单位

    Semiconductor Ceramics Lab., Department of Electrical Engineering, Dongeui University, Busan 614 714, Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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