1.2 μm Band GaInAs/GaAs High-Density Multiple-Wavelength Vertical Cavity Surface Emitting Laser Array

摘要

We demonstrate a densely packed multi-wavelength GaInAs/GaAs vertical cavity surface emitting laser array emitting in 1200 nm wavelength band. 110-channel emitters could be integrated in a 2.2 mm long bar with spatial spacing of 20 μm and wavelength spacing of 0.1 nm. All the emitters exhibit single mode operation with output power of over 1mW. The wavelength separation is precisely controlled by adjusting the bias current of each element.