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A Comprehensive Study on the Optical Properties of Thin Gold-Doped Rhenium Disulphide Layered Single Crystals

机译:掺金的二硫化hen薄层单晶光学性质的综合研究

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摘要

We present a comprehensive study on the optical properties of gold-doped rhenium disulphide (ReS_2:Au) layer crystal. Its anisotropic optical properties were studied by using the polarization-dependent optical absorption and photoconductivity (PC) measurements. Absorption measurements indicate that the absorption edge shifted toward high energy as the sample was slimmed down to a thin piece. For the first time, excitonic transitions have been observed by this method. The room temperature transition energies were evaluated to be 1.48 eV for E_1~(ex) and 1.516 eV for E_1~(ex).E_2~(ex) exciton dominates the transition as the polarization is parallel to the b-axis of the layer crystal, while E_2~(ex) exciton is most present as the polarization is perpendicular. PC spectra are performed to check this anisotropic phenomenon. Thermoreflectance modulation (TR) and photoluminescence (PL) measurements have been performed in the temperature range of 42 to 300 K. The temperature dependence of the transition energies and broadening parameters were determined.
机译:我们对金掺杂二硫化rh(ReS_2:Au)层晶体的光学性质进行全面研究。通过使用偏振相关的光吸收和光电导(PC)测量来研究其各向异性光学性能。吸收测量结果表明,随着样品变薄,吸收边缘向高能量方向移动。通过这种方法首次观察到了激子跃迁。 E_1〜(ex)的室温跃迁能量估计为1.48 eV,E_1〜(ex)的室温跃迁能量估计为1.516 eV.E_2〜(ex)激子占主导地位,因为极化与层晶体的b轴平行,而E_2〜(ex)激子由于极化是垂直的,所以最多。执行PC光谱以检查这种各向异性现象。已在42至300 K的温度范围内进行了热反射调制(TR)和光致发光(PL)测量。确定了跃迁能量和加宽参数的温度依赖性。

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  • 来源
    《Japanese journal of applied physics》 |2013年第4issue2期|04CH11.1-04CH11.5|共5页
  • 作者单位

    National Changhua University of Education, Changhua 500, Taiwan;

    National Changhua University of Education, Changhua 500, Taiwan;

    National Changhua University of Education, Changhua 500, Taiwan;

    Department of Applied Science, National Hsinchu University of Education, Hsinchu 300, Taiwan;

    National Chung Hsing University, Taichung 402, Taiwan;

    National Chung Hsing University, Taichung 402, Taiwan;

    Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan;

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