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首页> 外文期刊>Semiconductor Manufacturing, IEEE Transactions on >Process Performance Prediction for Chemical Mechanical Planarization (CMP) by Integration of Nonlinear Bayesian Analysis and Statistical Modeling
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Process Performance Prediction for Chemical Mechanical Planarization (CMP) by Integration of Nonlinear Bayesian Analysis and Statistical Modeling

机译:基于非线性贝叶斯分析和统计建模的化学机械平面化(CMP)工艺性能预测

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摘要

Chemical mechanical planarization (CMP) process has been widely used in the semiconductor manufacturing industry for realizing highly finished (Ra $sim 1$ nm) and planar surfaces (WIWNU $sim 1hbox{%}$, thickness standard deviation (SD) $sim 3$ nm) of in-process wafer polishing. The CMP process is rather complex with nonlinear and non-Gaussian process dynamics, which brings significant challenges for process monitoring and control. As an attempt to address this issue, a method is presented in this paper that integrates nonlinear Bayesian analysis and statistical modeling to estimate and predict process state variables, and therewith to predict the performance measures, such as material removal rate (MRR), surface finish, surface defects, etc. As an example of performance measure, MRR is chosen to demonstrate the performance prediction. A sequential Monte Carlo (SMC) method, namely, particle filtering (PF) method is utilized for nonlinear Bayesian analysis to predict the CMP process-state and for tackling the process nonlinearity. Vibration signals from both wired and wireless vibration sensors are adopted in the experimental study conducted using the CMP apparatus. The process states captured by the sensor signals are related to MRR using design of experiments and statistical regression analysis. A case study was conducted using actual CMP processing data by comparing the PF method with other widely used prediction approaches. This comparison demonstrates the effectiveness of the proposed approach, especially for nonlinear dynamic processes.
机译:化学机械平面化(CMP)工艺已广泛用于半导体制造业,以实现高度精加工(Ra $ sim 1 $ nm)和平面(WIWNU $ sim 1hbox {%} $,厚度标准偏差(SD)$ sim 3 $ nm)的过程中晶圆抛光。 CMP过程非常复杂,具有非线性和非高斯过程动力学,这给过程监视和控制带来了巨大挑战。为了解决这个问题,本文提出了一种方法,该方法集成了非线性贝叶斯分析和统计建模以估计和预测过程状态变量,并以此来预测性能指标,例如材料去除率(MRR),表面光洁度,表面缺陷等。作为性能衡量的一个示例,选择了MRR来演示性能预测。顺序蒙特卡罗(SMC)方法,即粒子滤波(PF)方法用于非线性贝叶斯分析,以预测CMP的工艺状态并解决工艺非线性。在使用CMP设备进行的实验研究中,采用了来自有线和无线振动传感器的振动信号。通过实验设计和统计回归分析,传感器信号捕获的过程状态与MRR相关。通过将PF方法与其他广泛使用的预测方法进行比较,使用实际的CMP处理数据进行了案例研究。这种比较证明了该方法的有效性,特别是对于非线性动态过程。

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