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Preparation and Characterization of NiFe Epitaxial Thin Films Grown on MgO(100) and SrTiO$_{3}$(100) Single-Crystal Substrates

机译:MgO(100)和SrTiO $ _ {3} $(100)单晶衬底上生长的NiFe外延薄膜的制备和表征

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NiFe epitaxial thin films were prepared on MgO(100) and SrTiO$_{3}$(100) single-crystal substrates by UHV-molecular beam epitaxy. The effects of substrate material and substrate temperature on the structure and the magnetic properties were investigated. In the early stage of NiFe film growth on MgO(100) substrate, formation of NiFe(11$bar{2}$ 0) epitaxial film with hcp structure is observed by in-situ RHEED. The metastable hcp-NiFe phase is presumably favored to relax the strain caused by a lattice mismatch at the NiFe/MgO(100) interface. With increasing the film thickness, fcc-NiFe(100) phase appears and the RHEED intensity from the fcc-phase increases. On the contrary, a high-quality fcc-NiFe(100) single-crystal film epitaxially grows on an SrTiO$_{3}$ (100) substrate. The magnetic properties of the NiFe epitaxial thin films grown on both the MgO(100) and the SrTiO $_{3}$(100) substrates are influenced by the magnetocrystalline anisotropy of fcc-NiFe crystal and the shape anisotropy caused by the surface undulations.
机译:通过超高压分子束外延在MgO(100)和SrTiO $ _ {3} $(100)单晶衬底上制备NiFe外延薄膜。研究了基底材料和基底温度对结构和磁性能的影响。在MgO(100)衬底上生长NiFe膜的早期阶段,通过原位RHEED观察到了具有hcp结构的NiFe(11 $ bar {2} $ 0)外延膜的形成。据推测,亚稳态hcp-NiFe相可缓解NiFe / MgO(100)界面处晶格失配引起的应变。随着膜厚度的增加,出现fcc-NiFe(100)相,并且来自fcc相的RHEED强度增加。相反,高质量的fcc-NiFe(100)单晶膜在SrTiO $ _ {3} $(100)衬底上外延生长。在MgO(100)和SrTiO $ _ {3} $(100)衬底上生长的NiFe外延薄膜的磁性能受fcc-NiFe晶体的磁晶各向异性和表面起伏引起的形状各向异性的影响。

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