机译:635 nm拉伸应变GaInP激光二极管的优化
Dept. of Phys. & Astron., Cardiff Univ., UK;
optimisation; gallium compounds; indium compounds; III-V semiconductors; quantum well lasers; current density; transparency; light polarisation; Fermi level; laser theory; spontaneous emission; band structure; semiconductor quantum wells; optimization; 635-nm tensile strained GaInP laser diodes; quantum well width; gain mechanisms; recombination mechanisms; 635-nm laser structures; segmented contact method; intrinsic properties; extrinsic effect; radiative efficiency; nonradiative recombination; intrinsic gain-spontaneous current density; tangential gain parameters; transparency current density; TE polarized spontaneous recombination; light splitting; heavy hole subbands; quasi-Fermi level separation; microscopic laser theory; gain spectra; TM polarization; TE polarization; 635 nm; 200 K; GaInP;
机译:635 nm拉伸应变GaInP激光二极管的优化
机译:优化635-NM拉伸应变GaInP激光二极管
机译:630 nm以下拉伸应变GaInP-AlGaInP QW激光器中多量子势垒结构对TE偏振的抑制
机译:拉伸应变GaInP激光二极管的自发发射测量
机译:二极管激光器中高应变低维有源区的特性。
机译:基于优化的T型光声电池和NIR二极管激光器的PPB级检测
机译:拉伸应变GaInP激光二极管中横向和横向电磁自发发射和增益的测量
机译:具有GaInp包层和质量传输埋层异质结构的低阈值InGaas应变层量子阱激光器(λ= 0.98微米)