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Measurement of transverse electric and transverse magnetic spontaneous emission and gain in tensile strained GaInP laser diodes

机译：拉伸应变GaInP激光二极管中横向和横向电磁自发发射和增益的测量

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作者
Lewis Gareth Michael; Smowton Peter Michael; Blood Peter; Jones G.; Bland S.;
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年度 2002
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原文格式 PDF
正文语种 eng
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专利

1. Gain, refractive index, linewidth enhancement factor from spontaneous emission of strained GaInP quantum-well lasers [J] . Hunziker G., Knop W. IEEE Journal of Quantum Electronics . 1995,第4期

机译：GaInP量子阱激光器自发发射的增益，折射率，线宽增强因子
2. Gain measurements on one, two, and three strained GaInP quantum well laser diodes [J] . Hunziker G., Knop W. IEEE Journal of Quantum Electronics . 1994,第10期

机译：在一个，两个和三个应变GaInP量子阱激光二极管上进行增益测量
3. Loss and Gain Measurements of Tensile-Strained Quantum Well Diode Lasers for Plasmonic Devices at Telecom Wavelengths [J] . Costantini D., Bousseksou A., Fevrier M., Quantum Electronics, IEEE Journal of . 2012,第1期

机译：电信波长下等离子设备的拉伸应变量子阱二极管激光器的损耗和增益测量
4. Spontaneous emission measurements of tensile strained GaInP laser diodes [C] . Smowton, P.M., Lewis, . 2002

机译：拉伸应变GaInP激光二极管的自发发射测量
5. Transverse mode properties of lasers with Gaussian gain. [D] . Maes, Carl Francis. 2003

机译：具有高斯增益的激光器的横向模式特性。
6. Strain engineering of transverse electric and transverse magnetic mode of material gain in GeSn/SiGeSn quantum wells [O] . Herbert S. Mączko, Robert Kudrawiec, Marta Gladysiewicz -1

机译：GeSn / SiGeSn量子阱中材料增益的横向和横向磁模式的应变工程
7. The Influence of Magnetic Domain Walls on Longitudinal and Transverse Magnetoresistance in Tensile Strained (Ga,Mn)As Epilayers [O] . Xiang, G., Samarth, N. 2007

机译：磁畴壁对纵向和横向的影响拉伸应变（Ga，mn）作为外延层的磁电阻

Measurement of transverse electric and transverse magnetic spontaneous emission and gain in tensile strained GaInP laser diodes

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