High power continuous and quasi-continuous wave InGaAsP/InP broad-waveguide separate confinement-heterostructure multiquantum well diode lasers

摘要

The application of the broad-waveguide concept to InGaAsP/InP diode lasers has resulted in a fourfold reduction in internal loss to 1.3 cm/sup -1/ while achieving a record low threshold current of 73 A/ cm/sup 2/ per quantum well. Output powers of 5.2 W continuous wave and 10 W quasi-continuous wave are demonstrated for 200 /spl mu/m-aperture lasers emitting at 1.43 /spl mu/m.