High-power near-resonant 1.55 micrometer-emitting InGaAsP/InP antiguided diode laser arrays.

摘要

This dissertation discusses design aspects, materials growth issues, device fabrication and characterization of high-power phase locked arrays of diode lasers and describes a series of experiments with progressive improvements in output power and beam quality from the first high-power 1.55;The best results obtained from strained-layer quaternary-quantum-well InGaAsP/InP 1.55