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Method of improving laser yield for target wavelengths in epitaxial InGaAsP lasers based upon the thermal conductivity of the InP substrate
Method of improving laser yield for target wavelengths in epitaxial InGaAsP lasers based upon the thermal conductivity of the InP substrate
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机译:基于InP衬底的热导率提高外延InGaAsP激光器中目标波长的激光产量的方法
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摘要
A method of producing a batch of MQW lasers from a plurality of wafers having doping concentrations within a concentration range. The MQW lasers are produced by epitaxially growing an InGaAsP quaternary layer on the substrates in a metal-organic chemical vapor deposition (MOCVD) reactor. The method includes the steps of segregating the substrates into groups based upon the substrate doping concentrations and batch producing the lasers at specific target wavelengths for each segregated substrate group.
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