Infrared intraband absorption detectors with etched 35 degrees mesa facets for vertically incident light

摘要

Reports for the first time of GaAs/AlGaAs intraband absorption detectors that are able to detect vertically incident long-wavelength infrared light (8 mu m) through etched 35 degrees mesa facets. With 2 V bias voltage the authors obtained responsivities of 0.06 A/W at 77 K and 0.11 A/W at 40 K and dark current densities of 19 pA/ mu m/sup 2/ at 77 K and 0.24 pA/ mu m/sup 2/ at 40 K.