FinFET 4T-SRAM operable at near-threshold region

摘要

This paper presents a new FinFET 4T-SRAM that is operated with differential write and single-end read mode, in the near-threshold region. To improve the read margin and the write stability, a 3T read/write assist circuit is added to the proposed SRAM. From the HSPICE simulation results in 20-nm predictive technology model (PTM), the proposed circuit has the same static noise margin (SNM), a shorter read/write time and smaller energy dissipation compared to conventional circuits.