Analytic Solution of the Channel Potential in Undoped Symmetric Dual-Gate MOSFETs

摘要

We extend our previous Lambert function-based analytic solution for the surface potential of undoped-body single-gate bulk MOSFETs to offer an explicit analytic solution of the surface potential of undoped-body symmetric dual-gate devices. The error produced by the proposed solution compared to exact results is reasonably small for typical device dimensions and bias conditions.