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Reconfigurable CMOS Oscillator Based on Multifrequency AlN Contour-Mode MEMS Resonators

机译:基于多频AlN轮廓模式MEMS谐振器的可重构CMOS振荡器

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This paper reports on the first demonstration of a reconfigurable complementary-metal–oxide–semiconductor (CMOS) oscillator based on microelectromechanical system (MEMS) resonators operating at four different frequencies (268, 483, 690, and 785 MHz). A bank of multifrequency switchable AlN contour-mode MEMS resonators was connected to a single CMOS oscillator circuit that can be configured to selectively operate in four different states with distinct oscillation frequencies. The phase noise (PN) of the reconfigurable oscillator was measured for each of the four different frequencies of operation, showing values between $-$94 and $-$ 70 dBc/Hz at a 1-kHz offset and PN floor values as low as $-$ 165 dBc/Hz at a 1-MHz offset. Jitter values as low as a 114-fs root mean square (integrated 12 kHz–20 MHz) and switching times as fast as 20 $muhbox{s}$ were measured. This first prototype represents a miniaturized solution (30 times smaller) over commercially available voltage-controlled surface-acoustic-wave oscillators and potentially has the advantage of generating multiple stable frequencies without the need of cumbersome and power-consuming phase-locked-loop circuits.
机译:本文报道了基于微机电系统(MEMS)谐振器的可重构互补金属氧化物半导体(CMOS)振荡器的首次演示,该谐振器在四个不同的频率(268、483、690和785 MHz)下工作。将一组多​​频可切换的AlN轮廓模式MEMS谐振器连接到单个CMOS振荡器电路,该电路可配置为在具有不同振荡频率的四种不同状态下选择性工作。针对四个不同工作频率中的每一个,对可重构振荡器的相位噪声(PN)进行了测量,显示出在1-kHz偏移下$-$ 94到$-$ 70 dBc / Hz之间的值,PN底值低至$ -在1 MHz偏移处为165 dBc / Hz。测得的抖动值低至114-fs均方根(积分的12 kHz–20 MHz),切换时间快至20 µh。第一个原型代表了比市售压控表面声波振荡器小型化的解决方案(小30倍),并且潜在地具有产生多个稳定频率的优势,而无需繁琐且耗电的锁相环电路。

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