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机译:基于横向场激励压电AlN轮廓模式MEMS谐振器的1.05-GHz CMOS振荡器
Dept. of Electr. & Syst. Eng., Univ. of Pennsylvania, Philadelphia, PA, USA;
CMOS integrated circuits; UHF oscillators; aluminium compounds; bulk acoustic wave devices; micromechanical devices; surface acoustic wave resonators; AMI semiconductor; AlN; CMOS on-chip inductor and capacitor; CMOS oscillator; complementary metal-oxide-semiconductor process; figure-of-merit; film bulk acoustic resonator; frequency 1 kHz; frequency 1.05 GHz; frequency 1.64 GHz; frequency 843 MHz; global system for mobile communications; lateral-field-excited piezoelectric contour-mode MEMS resonators; microelectromechanical oscillator; post-CMOS integrated on-chip direct gigahertz frequency synthesis; power 3.5 mW; reconfigurable multiband wireless communications; size 0.5 mum; surface acoustic wave; ultra-high frequency local oscillators;
机译:基于多频AlN轮廓模式MEMS谐振器的可重构CMOS振荡器
机译:基于压电AlN MEMS技术的双模谐振器和无开关可重构振荡器
机译:基于自耦合压电AlN轮廓模式谐振器的超高频通道选择MEMS滤波器
机译:基于厚度场激励的压电AlN轮廓模式MEMS谐振器的1.5 GHz CMOS压控振荡器
机译:AlN MEMS轮廓模式谐振器和CMOS电路的异构集成
机译:SOI基板上的轮廓模式MEMS ALN压电环谐振器的温度特性
机译:基于横向场激励压电alN谐振器的1.05 GHz mEms振荡器