Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

摘要

A GaN/SiC hybrid field-effect transistor (HyFET) is proposed as a high-voltage power device that provides a high-mobility lateral AlGaN/GaN channel to reduce the channel resistance and a vertical SiC drift region to sustain the high OFF-state voltage. The performance of the HyFET is evaluated by numerical device simulations. Compared with the conventional SiC MOSFET, the HyFET exhibits a greatly reduced together with a low and low gate charges. The figures of merit and of the HyFET are dramatically improved.