One-Time Programmable Memory Based on Antifuse for Crossbar Memory Application Featuring High Speed Operation and Low Power Consumption

摘要

${rm TaN}/{rm ZrTiO}x/{rm Pt}$ metal-insulator-metal structure was employed as the platform to evaluate the eligibility for antifuse one-time programmable (OTP) memory applications, and the impact of ${rm O}_{2}$ plasma on device performance was also discussed. Owing to the oxygen radicals that enhance the dielectric integrity, the voltage for state switching increases with ${rm O}_{2}$ plasma treatment. Memory cells without plasma treatment demonstrate promising characteristics for OTP memory applications in terms of a low dc switching voltage of 2 V, high programming speed of 60 ns, high read endurance up to $10^{6}$ reading cycles, and desirable retention time and low switching power density of 6.4 ${rm mW/cm}^{2}$. The memory cell technology not only exhibits the prominent performance which is advantageous over other dielectrics reported in the literature, but it also possesses the capability to from stackable 3-D architecture.