Dynamic Response of a-InGaZnO and Amorphous Silicon Thin-Film Transistors for Ultra-High Definition Active-Matrix Liquid Crystal Displays

摘要

The dynamic response of hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) and amorphous In-Ga-Zn-O (a-IGZO) TFT are compared. We study the storage capacitor charging characteristics by applying gate and data voltage waveforms corresponding to ultra-high definition (UHD) active-matrix liquid crystal displays (AM-LCDs). We show that the charging behavior of the a-Si:H TFT is insufficient for UHD AM-LCDs and that the a-IGZO TFT is capable of supporting at least 8 K4 K display resolution at 480 Hz. The impact of and gate voltage falling edge on feedthrough voltage is investigated. Because of higher mobility of the a-IGZO TFT, it is possible to reduce by mitigating channel charge redistribution with non-abrupt . The a-IGZO TFT shows no drawbacks in terms of when compared to the a-Si:H TFT. In addition, a larger can be used in combination with the a-IGZO TFT to reduce with minimal impact on its charging behavior. Gate overdrive operation is also evaluated for the a-IGZO TFT, which may improve charging characteristics with no adverse effects on . Our results show that t- e a-IGZO TFT is a suitable technology for UHD high-frame rate AM-LCDs.