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Interacting Topological Insulators with Synthetic Dimensions

机译:用合成尺寸互动拓扑绝缘体

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Recent developments of experimental techniques have given us unprecedented opportunities of studying topological insulators in high dimensions, while some of the dimensions are “synthetic,” in the sense that the effective lattice momenta along these synthetic dimensions are controllable periodic tuning parameters. In this work, we study interaction effects on topological insulators with synthetic dimensions. We show that, although the free fermion band structure of high-dimensional topological insulators can be precisely simulated with the “synthetic techniques,” the generic interactions in these effective synthetic topological insulators are qualitatively different from the local interactions in ordinary condensed-matter systems. And we show that these special but generic interactions have unexpected effects on topological insulators; namely, they change (or reduce) the classification of topological insulators differently from the previously extensively studied local interactions.
机译:最近的实验技术的发展已经给了我们在高维层中研究拓扑绝缘体的前所未有的机会,而一些尺寸是“合成的”,因为这些合成尺寸的有效格子势头是可控的周期性调谐参数。在这项工作中,我们研究了合成尺寸的拓扑绝缘体的相互作用。我们表明,尽管可以用“合成技术”可以精确地模拟高维拓扑绝缘体的自由差距带结构,但是这些有效合成拓扑绝缘体中的通用相互作用与普通缩合物系统中的局部相互作用定性不同。我们表明这些特殊但通用的互动对拓扑绝缘体有意外影响;即,改变(或减少)不同地从先前广泛研究的局部相互作用的拓扑绝缘体的分类。

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