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首页> 外文期刊>JETP Letters >Scattering of Electrons between Edge and Two-Dimensional States of a Two-Dimensional Topological Insulator and the Conductivity of the Topological Insulator Strip in a Metallic State
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Scattering of Electrons between Edge and Two-Dimensional States of a Two-Dimensional Topological Insulator and the Conductivity of the Topological Insulator Strip in a Metallic State

机译:二维拓扑绝缘体的边缘和二维状态之间的电子散射及金属状态拓扑绝缘带的电导率

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摘要

The lifetime of electrons on edge states of a two-dimensional topological insulator against the background of an allowed two-dimensional band has been determined. It has been shown that this time in the case of scattering on Coulomb impurities can be significantly larger than the mean free time of two-dimensional electrons. As a result, the conductivity of the metallic two-dimensional topological insulator strip can be determined primarily by edge states.
机译:已经确定了二维拓扑绝缘体的边缘状态对允许的二维频带背景的边缘状态的寿命。 已经表明,在库仑杂质上散射的情况下,这一次可以明显大于二维电子的平均空闲时间。 结果,金属二维拓扑绝缘体带的电导率可以主要由边缘状态确定。

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  • 来源
    《JETP Letters》 |2019年第5期|共3页
  • 作者

    Mahmoodian M. M.; Entin M. V;

  • 作者单位

    Russian Acad Sci Rzhanov Inst Semicond Phys Siberian Branch Novosibirsk 630090 Russia;

    Russian Acad Sci Rzhanov Inst Semicond Phys Siberian Branch Novosibirsk 630090 Russia;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 物理学;
  • 关键词

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