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3 topological phase transition method of three dimensional topological insulator using ultrafast terahertz field modulation

机译:超快太赫兹场调制的三维拓扑绝缘体的三种拓扑相变方法

摘要

The present invention provides a three-dimensional phase insulator material Dimensional phase insulator to modulate the spectrum of the terahertz wave passing through the material by varying the degree of coupling between the level of the metallic characteristic of the phase insulator surface and the bulk of the phonon resonance, Wherein the energy level of the surface (yellow) is a metallic property (TSS (topological surface state)), and the bulk of the internal surface is an indium (III) phase insulator material having an insulator or a phase insulator. (FR) may be asymmetrically generated by interactions or interference between a first response of terahertz generated in the bulk and a second response of terahertz generated in the metallic characteristic portion by adding In .;
机译:本发明提供了一种三维相绝缘体材料,该三维相绝缘体通过改变相绝缘体表面的金属特性水平与声子主体之间的耦合程度来调制通过该材料的太赫兹波的频谱。共振,其中表面(黄色)的能级是金属性质(TSS(拓扑表面状态)),而大部分内表面是具有绝缘体或相绝缘体的铟(III)相绝缘体材料。 (FR)可以通过在主体中产生的太赫兹的第一响应与在金属特征部分中产生的太赫兹的第二响应之间的相互作用或干扰而不对称地产生,通过添加In来实现。

著录项

  • 公开/公告号KR101770768B1

    专利类型

  • 公开/公告日2017-09-05

    原文格式PDF

  • 申请/专利权人 연세대학교 산학협력단;

    申请/专利号KR20150071844

  • 发明设计人 차순영;최현용;심상완;

    申请日2015-05-22

  • 分类号G01R25/04;

  • 国家 KR

  • 入库时间 2022-08-21 13:24:56

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