Spin Relaxation of Electrons Localized on Shallow and Deep Donor Centers in Silicon with Different Isotopic Composition

摘要

The results of a numerical calculation of the contribution of ligand superhyperfine interactions to the line width for the phosphorus donor electron in silicon are reported and show linear behavior at lower concentrations compared to deep centers. The linear dependence for the phosphorus center in silicon predicts an electron spin-relaxation time for isotopically purified 28Si:P longer than expected on the basis of the common square-root law. The spin-lattice relaxation processes in chromium doped silicon samples enriched by 28Si isotope and with natural isotopic abundances were studied.