机译:通过连续成分扩散在室温下沉积的Ga掺杂的氧化锌薄膜的电学和光学性质
Electronic Materials Center, Korea Institute of Science and Technology, 39-1, Hawolgok-dong, Sungbuk-gu, Seoul 136-791, Republic of Korea School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea;
rnOpto-electronic Materials Center, Korea Institute of Science and Technology, 39-1, Hawolgok-dong, Sungbuk-gu, Seoul 136-791, Republic of Korea;
rnElectronic Materials Center, Korea Institute of Science and Technology, 39-1, Hawolgok-dong, Sungbuk-gu, Seoul 136-791, Republic of Korea;
rnSchool of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea;
rnElectronic Materials Center, Korea Institute of Science and Technology, 39-1, Hawolgok-dong, Sungbuk-gu, Seoul 136-791, Republic of Korea;
continuous composition spread; transparent conducting oxides; ga doped ZnO; thin film;
机译:连续成分扩散法在室温下沉积铝掺杂氧化锌薄膜的电学和光学性质
机译:连续成分扩散法在室温下沉积铝掺杂氧化锌薄膜的电学和光学性质
机译:衬底温度对连续成分扩散制备的Ga掺杂ZnO薄膜电学和光学性能的影响
机译:氧化锌薄膜的电气和光学性能和分子束外延制备的重氧化铝掺杂氧化锌薄膜
机译:掺杂氧化锌薄膜的大气压化学气相沉积及其电学和光学性质。
机译:Zr掺杂对原子层沉积ZnO薄膜光学电学和微结构性质的影响
机译:通过准分子激光退火增强室温沉积铝掺杂氧化锌(AZO)薄膜的电学和光学性能