机译:通过电化学原子层沉积合成的纳米级半导体Pb_(1-x)Sn_xSe(x = 0.2)薄膜
Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China;
Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China;
Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China;
Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China;
Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China;
Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China;
Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China;
Department of Chemistry, Lanzhou University, Lanzhou 730000, PR China;
Pb_(1-x)Sn_xSe; Gold substrate; EC-ALD; UPD; Photoelectric switch;
机译:通过电化学原子层沉积(EC-ALD)合成的三元半导体化合物CuInS_2(CIS)薄膜
机译:原子层沉积合成的二氧化锡薄膜高放电速率的表征和电化学性能
机译:通过原子层沉积技术沉积的SrS_(1-x)Se_x和ZnS_(1-x)Se_x薄膜的XPS和电致发光研究
机译:单原子层沉积(FePt)_(1-x)Cux薄膜和Pt顶层沉积的FePt薄膜的结构研究
机译:用于原子层沉积Pb(ZrxTi1-x)O3薄膜的存储器应用工程纳米级多铁复合材料。
机译:AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积
机译:印度掺杂的氧化锆多层薄膜通过原子层沉积合成的IT-SOFCS:合成和电化学性能