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Methods of Forming Conductive Polysilicon Thin Films Via Atomic Layer Deposition and Methods of Manufacturing Semiconductor Devices Including Such Polysilicon Thin Films
Methods of Forming Conductive Polysilicon Thin Films Via Atomic Layer Deposition and Methods of Manufacturing Semiconductor Devices Including Such Polysilicon Thin Films
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机译:通过原子层沉积形成导电多晶硅薄膜的方法和包括该多晶硅薄膜的半导体器件的制造方法
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摘要
A method of forming a conductive polysilicon thin film and a method of manufacturing a semiconductor device using the same are provided. The method of forming a conductive polysilicon thin film may comprise simultaneously supplying a Si precursor having halogen elements as a first reactant and a dopant to a substrate to form a first reactant adsorption layer that is doped with impurities on the substrate and then supplying a second reactant having H (hydrogen) to the first reactant adsorption layer to react the H of the second reactant with the halogen elements of the first reactant to form a doped Si atomic layer on the substrate.
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