XPS and electroluminescence studies on SrS_(1-x)Se_x and ZnS_(1-x)Se_x thin films deposited by atomic layer deposition technique

摘要

SrS_(1-x)Se_x and ZnS_(1-x)Se_x thin films were deposited by the atomic layer deposition (ALD) technique using elemental selenium as the Se source, thus avoiding use of H_2Se or organometallic selenium compounds. X-ray diffraction (XRD) analysis showed that the films were solid solutions and X-ray photoelectron spectroscopy (XPS) data showed that the surface of both Zn_(1-x)Se_x and SrS_(1-x)Se_x were covered with an oxide and carbon-containing contaminants from exposure to air. The oxidation of SrS_(1-x)Se_x extended into the film and peak shifts from sulfate were found on the surface. Luminance measurements showed that emission intensity of the ZnS_(1-x)Se_x:Mn alternating current thin film electroluminescent (ACTFEI.) devices at fixed voltage was almost the same as that of the ZnS:Mn device, while emission intensity of the SrS_(1-x)Se_x:Ce devices decreased markedly as compared to the SrS:Ce device. Emission colors of the devices were altered only slightly due to selenium addition.