机译:利用俄歇电子能谱深度剖析法确定在2英寸SiC晶片上生长的石墨烯层的厚度分布
Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, Konkoly Thege M. ut 29-33, 1121 Budapest, Hungary,Bay Zoltan Nonprofit Ltd. for Applied Research Institute for Materials Science and Technology, H-1116 Budapest, Fehervari str. 130;
Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, Konkoly Thege M. ut 29-33, 1121 Budapest, Hungary;
Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, Konkoly Thege M. ut 29-33, 1121 Budapest, Hungary;
Institute for Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, Konkoly Thege M. ut 29-33, 1121 Budapest, Hungary;
Department of Physics, Chemistry and Biology, Linkoeping University, S-581 83 Linkoeping, Sweden;
Graphene on SiC; Buffer layer composition; AES depth profiling; Graphene thickness; Sublimation epitaxy;
机译:低能溅射深度分析和因子分析的俄歇电子能谱研究SiC中溅射诱导的蚀变层
机译:低温氧化法制备的电磁片上铁氧化物层的俄歇电子能谱深度剖析
机译:溅射深度分布的俄歇电子能谱表征非晶态Zr基合金上的氧化物层
机译:螺旋电子光谱溅射深度分析测定纳米结构中纳米结构中的间隙系数
机译:通过发光光谱和X射线衍射测定在6H-SiC(0001)衬底上生长的GaN和Al(x)Ga(1-x)N薄膜的应变和组成。
机译:电子密度和电子电子的温度依赖性SiC上生长的单层外延石墨烯中的相互作用
机译:通过俄歇电子能谱深度剖析确定在2“ SiC晶片上生长的石墨烯层的厚度分布