Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application

摘要

A nanogap electrode fabrication method was developed and nanogap electrode as small as 17 nmnwas achieved based on sacrificial spacer process and conventional lithography. We have transferrednthis method to lateral phase-change random access memory u0002PCRAMu0003 device fabrication. Thenelectrical characterizations of 4.6 u0002m gap width using conventional lithography and 88 nm widthnbased on this technology are shown. It is found that the threshold voltage and the dc powernconsumption are remarkably decreased due to nanogap electrode process. Our method cannot onlynimprove the fabrication efficiency of PCRAM but also be easily transferred to other nanoelectronicsnapplications. © 2010 American Institute of Physics. u0004doi:10.1063/1.3431297