机译:CAN / ALGAN场效应晶体管中的低频噪声和陷阱密度
Inst High Pressure Phys PAS CENTERA Labs Ul Sokolowska 29-37 PL-01142 Warsaw Poland|Natl Acad Sci Ukraine V Ye Lashkaryov Inst Semicond Phys 41 Pr Nauki UA-03680 Kiev Ukraine;
Ctr Phys Sci & Technol FTMC Terahertz Photon Lab Sauletekio Al 3 LT-10257 Vilnius Lithuania;
Inst High Pressure Phys PAS CENTERA Labs Ul Sokolowska 29-37 PL-01142 Warsaw Poland|Natl Acad Sci Ukraine V Ye Lashkaryov Inst Semicond Phys 41 Pr Nauki UA-03680 Kiev Ukraine;
Inst High Pressure Phys PAS Ul Sokolowska 29-37 PL-01142 Warsaw Poland;
Ctr Phys Sci & Technol FTMC Terahertz Photon Lab Sauletekio Al 3 LT-10257 Vilnius Lithuania;
Inst High Pressure Phys PAS CENTERA Labs Ul Sokolowska 29-37 PL-01142 Warsaw Poland|Natl Acad Sci Ukraine V Ye Lashkaryov Inst Semicond Phys 41 Pr Nauki UA-03680 Kiev Ukraine|Warsaw Univ Technol CEZAMAT PL-02822 Warsaw Poland;
Inst High Pressure Phys PAS Ul Sokolowska 29-37 PL-01142 Warsaw Poland;
Inst High Pressure Phys PAS CENTERA Labs Ul Sokolowska 29-37 PL-01142 Warsaw Poland|Warsaw Univ Technol CEZAMAT PL-02822 Warsaw Poland;
Ctr Phys Sci & Technol FTMC Terahertz Photon Lab Sauletekio Al 3 LT-10257 Vilnius Lithuania;
Inst High Pressure Phys PAS CENTERA Labs Ul Sokolowska 29-37 PL-01142 Warsaw Poland|Warsaw Univ Technol CEZAMAT PL-02822 Warsaw Poland|Univ Montpellier Lab Charles Coulomb F-34950 Montpellier France|CNRS UMR 5221 F-34950 Montpellier France;
Inst High Pressure Phys PAS CENTERA Labs Ul Sokolowska 29-37 PL-01142 Warsaw Poland;
机译:光化学气相沉积SiO_2层的AlGaN / GaN / AlGaN双异质结构金属氧化物半导体半结构场效应晶体管的高温性能和低频噪声特性
机译:使用低频噪声技术的AlGaN / GaN异质结构场效应晶体管中的场辅助发射
机译:高栅极和沟道电场下AlGaN / GaN高电子迁移率晶体管的低频噪声光谱研究。
机译:InAlN / GaN和AlGaN / GaN异质结构场效应晶体管中电应力的低频噪声测量
机译:Si纳米线和基于二维MoS2的场效应晶体管中的电子传输和低频噪声表征。
机译:钝化AlGaN / GaN高电子移动晶体管的大信号线性和高频噪声
机译:alGaN / GaN异质结中的低频噪声场效应晶体管和金属氧化物半导体异质结构场效应晶体管
机译:Gaas场效应晶体管的表面效应和低频噪声