Stretchable ferroelectric field-effect-transistor with multi-level storage capacity and photo-modulated resistance

摘要

Implementing stretchable memory is the key toward an intelligent device possessing wearability and implantability. In this work, we construct a stretchable ferroelectric field effect transistor (Fe-FET) based on buckled poly(vinylidene fluoride-trifluoroethylene)/poly(3-hexyl thiophene) [P(VDF-TrFE)/P3HT] bilayers. The fabrication procedure avoids complicated etching steps and photolithography process, which significantly reduce the need for equipment and prevent harm to the polymers. Multilevel storage capacity and photomodulated resistance are achieved in the stretchable Fe-FET, in which the conductance of the P3HT layer can be continuously adjusted by the polarization of the P(VDF-TrFE) layer. The stored information remains stable under 20% tensile deformation and is retained even after 2000 stretching/releasing cycles. The good mechanical stability and multilevel storage capacity make this stretchable Fe-FET potential for utilization in smart labels, epidermal systems, and even biointegrated artificial synapses.