Size- and shape-controlled GaN nanocrystals grown on Si(111) substrate by reactive epitaxy

摘要

We report the investigation of coherent GaN nanocrystals spontaneously formed by nitrogen-plasma-assisted reactive epitaxy with Ga droplets supported on the single crystalline Si3N4(0001)/Si(111) surface. The distribution of grown GaN nanocrystals, as revealed by scanning electron microscopy and cross-sectional transmission electron microscopy, is very uniform in size (similar to16 nm) and shape and the distribution width is significantly narrower than that of Ga droplets deposited in the Volmer-Weber mode. By using high-resolution electron microscopy, the shape and crystalline structure of the self-assembled GaN nanocrystals can be determined to be truncated triangular pyramids formed by the facets of the GaN wurtzite lattice. (C) 2004 American Institute of Physics.