Low-frequency noise spectroscopy in Au-GaAs Schottky diodes with InAs quantum dots

摘要

The temperature dependence of low-frequency noise in Au-GaAs Schottky diodes, with InAs quantum dots (QDs) embedded in the GaAs confining layers, is investigated in the temperature range of 77-298 K and at frequencies from 1 Hz to 5 kHz. Diodes prepared on samples with similar structure but without QDs exhibit 1 /f behavior. In diodes containing QDs, in addition to the 1 /f noise at low frequencies, generation-recombination (g-r) noise at higher frequencies was observed, related to single energy traps in the GaAs layer. Analysis of the experimental data has shown that the g-r noise is related to three traps with activation energies 0.234, 0.09 and 0.075 eV, corresponding to the ground and two excited confined states in the QDs.