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Enhancement of field emission of aligned carbon nanotubes by thermal oxidation

机译:通过热氧化增强取向碳纳米管的场发射

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摘要

To improve the field emission current density of aligned carbon nanotubes grown by thermal chemical vapor deposition, postgrowth thermal annealing was conducted at 850℃ for 1 h in vacuum plus at 465℃ for 2 h in air. It was found that the highest field emission current density significantly improved by a factor of 4 (from 19 to 79 mA/cm~2), which is due to the substantial increase of the emitting area of the carbon nanotubes after annealing. This result is important for applications of using carbon nanotubes as high current electron sources, microwave devices, flat panel displays, etc.
机译:为了提高通过热化学气相沉积法生长的取向碳纳米管的场发射电流密度,在850℃下真空1h,然后在465℃空气中2h进行后生长热退火。发现最高场发射电流密度显着提高了4倍(从19至79mA / cm〜2),这是由于退火后碳纳米管的发射面积的显着增加。该结果对于将碳纳米管用作大电流电子源,微波设备,平板显示器等的应用很重要。

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